By Alberto Bosio, Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel
Advanced try equipment for SRAMs: powerful recommendations for Dynamic Fault Detection in Nanoscaled Technologies
Modern electronics depends upon nanoscaled applied sciences that current new demanding situations by way of checking out and analysis. thoughts are really susceptible to defects due to the fact that they make the most the know-how limits to get the top density. This ebook is a useful advisor to the checking out and prognosis of the most recent iteration of SRAM, some of the most common kind of stories. Classical tools for trying out reminiscence are designed to deal with the so-called "static faults", yet those attempt suggestions will not be enough for faults which are rising within the most modern Very Deep Sub-Micron (VDSM) applied sciences. those new faults, often called "dynamic faults", aren't lined by way of classical algorithms and require the devoted try out and prognosis recommendations offered during this book.
- First ebook to give whole, state of the art assurance of dynamic fault trying out for SRAM memories;
- Presents content material utilizing a "bottom-up" process, from the research of explanations of malfunctions as much as the new release of clever attempt recommendations;
- Includes case reviews protecting all reminiscence parts (core-cells, handle decoders, write drivers, experience amplifiers, etc.);
- Proposes an exhaustive research of resistive-open defects in every one reminiscence part and the ensuing dynamic fault modeling.
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Extra info for Advanced Test Methods for SRAMs: Effective Solutions for Dynamic Fault Detection in Nanoscaled Technologies
The introduction of a ⇓ element allows the sensitization phase to be also performed with the opposite addressing order of access on the row. , 512/2 = 256 of RESs. , ⇑w0 → nb_op = 1; ⇑r1w0 → nb_op = 2), the maximum number of RESs that a core-cell endures is RESmax = (nb_cell − 1) · nb_op and the minimum one is RESmin = (nb_cell · nb_op) / 2 This is graphically illustrated in Fig. 11, where the color of core-cells is darker when they endure a higher number of RESs. 3 Analysis and Test of dRDF RESmax 35 RESmin RESmax Fig.
2005b) give a formal confirmation of the previous assumptions and analysis through SPICE simulations. For these simulations, a reference 8kx32 memory in a 130 nm technology is considered. This memory is organized as an array of 512 word lines × 512 bit lines, with 128 blocks. When a word line is activated, all the 512 core-cells of the corresponding row are connected to respective bit lines, but only one core-cell per block (128) is accessed for read/write operation and the others (384 = 512–128) undergo a RES.
The consecutive RESs produce the progressive degradation of the voltage of node SB. This node, after seven RESs, reaches the threshold of VDD/2 and the core-cell swaps. Consequently, the core-cell presents a DRF because with the normal use of the memory it loses its stored value. 2 dDRF Due to Defects Df2 and Df3 In some ranges of resistance values for defects Df2 and Df3, a peculiar behavior of the defective core-cell, leading to data loss, can be observed (Dilillo et al. 2005a). 3 k In order to explain this case, the experiments detailed in Dilillo et al.
Advanced Test Methods for SRAMs: Effective Solutions for Dynamic Fault Detection in Nanoscaled Technologies by Alberto Bosio, Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel